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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5484LT1/D JFET Transistor N-Channel 2 SOURCE 3 GATE MMBF5484LT1 Motorola Preferred Device 1 DRAIN MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg - 65 to +150 mW mW/C C Value 25 25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 318 - 08, STYLE 10 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 - 55 to +150 Unit mW mW/C C/W C DEVICE MARKING MMBF5484LT1 = 6B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = - 20 Vdc, VDS = 0) (VGS = - 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS -- -- VGS(off) - 0.3 - 1.0 - 0.2 - 3.0 nAdc Adc Vdc - 25 -- Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 1. FR- 5 = 1.0 |Yfs| |yos| 3000 -- 6000 50 mhos mhos 0.75 0.062 in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MMBF5484LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL- SIGNAL CHARACTERISTICS (Continued) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss Crss Coss -- -- -- 5.0 1.0 2.0 pF pF pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 15 Vdc, ID = 1.0 mAdc, YG = 1.0 mmhos) (RG = 1.0 k, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, YG = 1.0 mhos) (RG = 1.0 M, f = 1.0 kHz) Common Source Power Gain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) NF -- -- Gps 16 3.0 2.5 25 dB dB POWER GAIN 24 f = 100 MHz 20 PG , POWER GAIN (dB) 16 12 400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 8.0 4.0 Figure 1. Effects of Drain Current 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5484LT1 Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 1-12 pF 1-12 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.8-8.0 pF 0.8-8.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H** L2 Adjust VGS for ID = 50 mA VGS < 0 Volts *L1 NOTE: The noise source is a hot-cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1 *L2 *L3 17 turns, (approx. -- depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 4-1/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 3-1/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE). **L2 **L3 6 turns, (approx. -- depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE). Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit NOISE FIGURE (Tchannel = 25C) 10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V 6.0 f = 400 MHz 4.0 4.5 f = 400 MHz 3.5 2.0 0 0 100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 18 20 2.5 1.5 0 2.0 100 MHz 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 Figure 3. Effects of Drain-Source Voltage Figure 4. Effects of Drain Current INTERMODULATION CHARACTERISTICS + 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 - 20 - 40 - 60 - 80 - 100 - 120 - 140 - 160 - 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS - 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT - 80 - 60 - 40 - 20 Pin, INPUT POWER PER TONE (dB) 0 + 20 Figure 5. Third Order Intermodulation Distortion Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MMBF5484LT1 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 6. Input Admittance (yis) Figure 7. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS Figure 8. Forward Transadmittance (yfs) Figure 9. Output Admittance (yos) 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5484LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320 ID = 0.25 IDSS 200 300 0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 10. S11s 30 40 20 10 0 350 340 330 320 40 30 20 Figure 11. S12s 10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50 310 300 0.7 290 280 270 260 250 240 0.6 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 12. S21s Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 13. S22s 5 MMBF5484LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 14. Input Admittance (yig) Figure 15. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 16. Forward Transfer Admittance (yfg) Figure 17. Output Admittance (yog) 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5484LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320 140 150 160 170 180 190 200 210 220 140 150 160 170 0.04 180 190 200 210 220 Figure 18. S11g Figure 19. S12g 30 40 20 10 0 0.5 350 340 330 320 40 30 20 10 0 1.5 1.0 100 350 300 200 400 340 500 700 600 800 330 320 100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50 0.9 900 310 ID = IDSS, 0.25 IDSS 0.8 300 0.7 290 280 270 260 250 240 0.6 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 20. S21g Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 21. S22g 7 MMBF5484LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5484LT1 PACKAGE DIMENSIONS A L 3 BS 1 2 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318-08 ISSUE AE SOT-23 (TO-236AB) Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 MMBF5484LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 MMBF5484LT1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *MMBF5484LT1/D* |
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